Abstract: A novel method for determining the parasitic capacitance of power MOSFETs is proposed. Unlike conventional methods that rely on small-signal measurements under specific bias conditions, the ...
Reverse polarity is one of the most common causes of circuit failure, from hobby projects to industrial systems. The good news is that a well-designed reverse polarity protection using MOSFET ...
Abstract: In this work, we introduce a TCAD modeling approach for 22nm ultra-thin body and buried oxide fully depleted silicon on insulator (UTBB-FDSOI) MOSFETs, tailored to operate at cryogenic ...
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